PART |
Description |
Maker |
RF1K49221 FN4314 |
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFETPower MOSFET 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET From old datasheet system 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET?Power MOSFET 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET Power MOSFET 2.5A/ 60V/ 0.130 Ohm/ ESD Rated/ Dual N-Channel LittleFET Power MOSFET
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INTERSIL[Intersil Corporation]
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RF1K49154 |
2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET?Power MOSFET 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFETPower MOSFET
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
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BSS84DW2 BSS84DW-7-F |
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 130 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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Diodes Incorporated Diodes, Inc.
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STP25NM60N STW25NM60N STB25NM60N STF25NM60N STB25N |
20 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 20 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC N-channel 600 V, 0.130 Ω , 21 A, MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 N-channel 600 V, 0.130 Ω , 21 A, MDmesh?/a> II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
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http:// STMicroelectronics
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MRF9130L |
MRF9130L, MRF9130LR3, MRF9130LSR3 GSM/EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETs
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Motorola
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SEMIX101GD126HDS08 |
Trench IGBT Modules 130 A, 1200 V, N-CHANNEL IGBT
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Semikron International
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CT30TM-8 |
128 x 64 pixel format, LED Backlight available 130 A, 400 V, N-CHANNEL IGBT, TO-220F MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors] Mitsubishi Electric Corporation
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PHA3135-130M |
Computers; Leaded Process Compatible:Yes RoHS Compliant: Yes RadarPulsedPowerModule15,,13014500msPulse 3.1 - 3.5吉赫 RadarPulsedPowerModule/ 115/ 130/145W/100msPulse 3.1 - 3.5 GHz RadarPulsedPowerModule 115 130145W100msPulse 3.1 - 3.5 GHz RadarPulsedPowerModule, 115, 130,145W,100msPulse 3.1 - 3.5 GHz
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MACOM[Tyco Electronics]
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BLF7G22LS-130 |
Power LDMOS transistor BLF7G22LS-130<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF7G22LS-130<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,; Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
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NXP Semiconductors N.V.
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BUZ40B BSP372 BSP373 BSS129 BSS101 SN7000 BSS135 |
8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 TO-220, 3 PIN SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) 150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 130 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 80 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
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Infineon Technologies AG SIEMENS AG SIEMENS A G
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PT2271A PT2271A-L4P PT2271A-L0P PT2271A-L0S PT2271 |
917120 (130-Y SPEC) CUSTOMER PART# 588R867H02 NC/NR 遥控解码 Remote Control Decoder 遥控解码 Box-shaped pin header, Discrete wire crimping connection, Complete locking mechanism, Discrete wire connectors; HRS No: 541-0973-1 00; No. of Positions: 4; Operating Temperature Range (degrees C): -35 to 85; General Description: Accessory; Retainer 917120 (130-Y SPEC) CUSTOMER PART# 588R867H02 NC/NR LOW G Z-AXIS ACCELEROM
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Princeton Technology, Corp. Carlo Gavazzi Princeton Technology Corporation PTC[Princeton Technology Corp] Princeton Technology Co...
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